Communications at congresses:
XRD analysis of InGaN uniform layers grown on Si (111) without any buffer layers and on Sapphire
Year:2014
Research Areas
- Semiconductors ii-vi, iii-v and iv-iv,
- Solar cells
Information
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Abstract
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| The International Workshop on Nitride Semiconductors (IWN) is a biennial academic conference in the field of group III nitride research. The IWN and the International Conference on Nitride Semiconductors (ICNS) are held in alternating years and cover similar subject areas. | |
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International
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Si |
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Congress
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International Workshop on Nitrides 2014 |
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970 |
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Place
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Wroclaw, Polonia |
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Reviewers
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Si |
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ISBN/ISSN
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00000000 |
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Start Date
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24/08/2014 |
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End Date
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29/08/2014 |
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From page
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0 |
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To page
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3 |
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Proceedings |
Open Access publication
Participants
- Autor: Victor Jesus Gomez Hernandez UPM
- Autor: Zarko Gacevic UPM
- Autor: Pavel Aseev . UPM
- Autor: Paul Soto Rodriguez UPM
- Autor: Praveen Kumar . UPM
- Autor: Enrique Calleja Pardo UPM
- Autor: Richard Notzel . UPM
- Autor: Miguel Angel Sanchez Garcia UPM
Research Group, Departaments and Institutes related
- Creador: Centro o Instituto I+D+i: Instituto Universitario de Sistemas Optoelectrónicos y Microtecnología
- Departamento: Ingeniería Electrónica