Research Publications in journals:
Electroreflectance characterization of AlInGaN/GaN high-electron mobility heterostructures
Year:2015
Research Areas
Information
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Abstract
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International
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Si |
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JCR
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Si |
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Title
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SEMICONDUCTOR SCIENCE AND TECHNOLOGY |
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ISBN
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0268-1242 |
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Impact factor JCR
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2,206 |
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Impact info
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Volume
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30 |
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10.1088/0268-1242/30/8/085014 |
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Journal number
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8 |
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From page
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0 |
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To page
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6 |
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Month
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Ranking
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0 |
Open Access publication
Participants
- Autor: t. brazzini UPM
- Autor: p. yu bokov
- Autor: m. f. romero UPM
- Autor: f. calle UPM
- Autor: m. feneberg
- Autor: r. goldhahn
Research Group, Departaments and Institutes related
- Creador: No seleccionado
- Grupo de Investigación: Grupo de Dispositivos Semiconductores del ISOM
- Centro o Instituto I+D+i: Instituto Universitario de Sistemas Optoelectrónicos y Microtecnología
- Departamento: Ingeniería Electrónica