Research Publications in journals:
Effect of annealing in the Sb and In distribution of type II GaAsSb-capped InAs quantum dots
Year:2015
Research Areas
Information
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Abstract
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International
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Si |
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JCR
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Si |
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Title
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SEMICONDUCTOR SCIENCE AND TECHNOLOGY |
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ISBN
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0268-1242 |
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Impact factor JCR
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2,19 |
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Impact info
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Volume
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30 |
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10.1088/0268-1242/30/11/114006 |
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Journal number
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11 |
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From page
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0 |
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To page
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9 |
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Month
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Ranking
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0 |
Open Access publication
Participants
- Autor: j. m. ulloa UPM
- Autor: d. f. reyes
- Autor: a. guzman UPM
- Autor: a. hierro UPM
- Autor: d. l. sales
- Autor: r. beanland
- Autor: a. m. sanchez
- Autor: d. gonzalez
Research Group, Departaments and Institutes related
- Creador: No seleccionado
- Grupo de Investigación: Grupo de Dispositivos Semiconductores del ISOM
- Centro o Instituto I+D+i: Instituto Universitario de Sistemas Optoelectrónicos y Microtecnología
- Departamento: Ingeniería Electrónica
- Departamento: Ciencia de Materiales