Research Publications in journals:
Type II InAs/GaAsSb quantum dots: Highly tunable exciton geometry and topology
Year:2015
Research Areas
Information
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Abstract
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International
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Si |
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JCR
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Si |
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Title
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APPLIED PHYSICS LETTERS |
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ISBN
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0003-6951 |
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Impact factor JCR
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3,515 |
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Impact info
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Volume
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107 |
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10.1063/1.4934841 |
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Journal number
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18 |
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From page
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0 |
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To page
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4 |
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Month
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Ranking
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0 |
Open Access publication
Participants
- Autor: j. m. ulloa UPM
- Autor: a. d. utrilla
- Autor: j. m. llorens
- Autor: a. guzman UPM
- Autor: l. wewior
- Autor: a. hierro UPM
- Autor: e. r. cardozo de oliveira
- Autor: b. alen
Research Group, Departaments and Institutes related
- Creador: No seleccionado
- Grupo de Investigación: Grupo de Dispositivos Semiconductores del ISOM
- Centro o Instituto I+D+i: Instituto Universitario de Sistemas Optoelectrónicos y Microtecnología
- Departamento: Ingeniería Electrónica
- Departamento: Ciencia de Materiales