Memorias de investigación
Communications at congresses:
Design flexibility of ultra-high efficiency 4-junction inverted metamorphic solar cells
Year:2015
Research Areas
  • Electronic devices,
  • Solar cells,
  • Technology of devices for engineering
Information
Abstract
We present recent improvements to the 4-junction inverted metamorphic solar cell. The device now includes a (Ga)InAsP buffer that transitions to lattice constants greater than InP, which allows access to GaInAs subcells with bandgaps < 0.74 eV and an additional 2 mA/cm2 of bottom junction photocurrent at AM1.5D. However, the optimal design depends on the spectrum and operating temperature. We show how the device flexibility can be used to fine-tune the design for various spectra in order to maximize energy yield for a given operating condition. 1-sun devices achieve 35.3% efficiency under the AM0 spectrum and 37.8% efficiency under the global spectrum at 25°C. Concentrator devices achieve 45.7% peak efficiency under 234x the direct spectrum and maintain over 45% efficiency at 700x at 25°C. Other device improvements include a 4-layer anti-reflection coating with low power loss, and reduced series resistance.
International
Si
Congress
42nd IEEE Photovoltaic Specialist Conference
960
Place
New Orleans, EEUU
Reviewers
Si
ISBN/ISSN
978-1-4799-7944-8
10.1109/pvsc.2015.7356439
Start Date
14/06/2015
End Date
19/06/2015
From page
1
To page
3
Proc. PVSC 2015
Participants
  • Autor: R.M. France
  • Autor: J.F. Geisz
  • Autor: Ivan Garcia Vara UPM
  • Autor: M.A. Steiner
  • Autor: W.E. McMahon
  • Autor: D.J. Friedman
  • Autor: T.E. Moriarty
  • Autor: C. Osterwald
  • Autor: J.S. Ward
  • Autor: A. Duda
  • Autor: M. Young
  • Autor: W.J. Olavarria
Research Group, Departaments and Institutes related
  • Creador: Grupo de Investigación: Semiconductores III-V
  • Centro o Instituto I+D+i: Instituto de Energía Solar
  • Departamento: Electrónica Física