Memorias de investigación
Communications at congresses:
Effects of 10 MeV proton irradiation on III-V solar cells
Year:2015
Research Areas
  • Solar cells
Information
Abstract
In this work we present our latest results and analysis of a 10 MeV proton irradiation experiment performed on III-V solar cells. A set of representative devices were irradiated for different fluences, including latticematched GaInP/GaInAs/Ge triple junction, GaInP/Ge double junction, and GaAs and Ge single junction solar cells. The methodology applied included the irradiation of two devices of each type; for a better control of the measurements, non-irradiated devices with the same characteristics of those irradiated were used as reference. The devices were monitored before and after each exposure by in-situ characterization of the electrical response under dark and under illumination using a solar simulator connected to the irradiation chamber through a borosilicate glass window. Ex-situ characterization techniques included dark and 1 sun AM0 illumination I-V curve and external quantum efficiency measurements. Furthermore, results of the numerical simulation of devices with D-AMPS-1D code are presented in order to give a physical interpretation of the results. DLTS spectroscopy preliminary results for single junction GaAs cells are also presented.
International
Si
Congress
31st European Photovoltaic Solar Energy Conference
960
Place
Hamburgo (Alemania)
Reviewers
Si
ISBN/ISSN
3-936338-39-6
10.4229/EUPVSEC20152015-4CV.3.8
Start Date
14/09/2015
End Date
18/09/2015
From page
1439
To page
1443
Proc. 31st PVSEC
Participants
  • Autor: E. Yaccuzzi
  • Autor: Mario Ochoa Gómez UPM
  • Autor: M. Barrera
  • Autor: Enrique Barrigon Montañes UPM
  • Autor: S.E. Rodríguez
  • Autor: P. Espinet-González
  • Autor: M.L. Ibarra
  • Autor: J. García
  • Autor: E.M. Godfrin
  • Autor: M. Alurralde
  • Autor: F. Rubinelli
  • Autor: Carlos Algora Del Valle UPM
  • Autor: Ignacio Rey-Stolle Prado UPM
  • Autor: J. Plá
Research Group, Departaments and Institutes related
  • Creador: Grupo de Investigación: Semiconductores III-V
  • Departamento: Electrónica Física