Abstract
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The evolution of the Si bulk minority carrier lifetime during the heteroepitaxial growth of III-V on Si multi-junction solar cell structures via metal-organic vapor phase epitaxy has been analyzed. Initially, the emitter formation produces important lifetime degradation. Nevertheless, a progressive recovery was observed during the growth of the metamorphic GaAsP/Si structure. A step-wise mechanism has been proposed to explain the lifetime evolution observed during this process. The initial lifetime degradation is believed to be related to the formation of thermally-induced defects within the Si bulk. These defects are subsequently passivated by fast-diffusing atomic hydrogen -coming from precursor (i.e. PH3 and AsH3) pyrolysis- during the subsequent III-V growth. These results indicate that the MOVPE environment used to create the III-V/Si solar cell structures has a dynamic impact on the minority carrier lifetime. Consequently, designing processes that promote the recovery of the lifetime is a must to support the production of high-quality III-V/Si solar cells. | |
International
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Si |
Congress
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42nd IEEE Photovoltaic Specialists Conference |
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960 |
Place
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New Orleans, LA (EEUU) |
Reviewers
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Si |
ISBN/ISSN
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978-1-4799-7944-8 |
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10.1109/PVSC.2015.7356380 |
Start Date
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14/06/2015 |
End Date
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19/06/2015 |
From page
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1 |
To page
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6 |
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Proc. 42nd IEEE PVSC |