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Evolution of the silicon bottom cell photovoltaic behavior during III-V on Si multi-junction solar cells production

Año:2015

Áreas de investigación

Datos

Descripción
The evolution of the Si bulk minority carrier lifetime during the heteroepitaxial growth of III-V on Si multi-junction solar cell structures via metal-organic vapor phase epitaxy has been analyzed. Initially, the emitter formation produces important lifetime degradation. Nevertheless, a progressive recovery was observed during the growth of the metamorphic GaAsP/Si structure. A step-wise mechanism has been proposed to explain the lifetime evolution observed during this process. The initial lifetime degradation is believed to be related to the formation of thermally-induced defects within the Si bulk. These defects are subsequently passivated by fast-diffusing atomic hydrogen -coming from precursor (i.e. PH3 and AsH3) pyrolysis- during the subsequent III-V growth. These results indicate that the MOVPE environment used to create the III-V/Si solar cell structures has a dynamic impact on the minority carrier lifetime. Consequently, designing processes that promote the recovery of the lifetime is a must to support the production of high-quality III-V/Si solar cells.
Internacional	Si
Nombre congreso	42nd IEEE Photovoltaic Specialists Conference
Tipo de participación	960
Lugar del congreso	New Orleans, LA (EEUU)
Revisores	Si
ISBN o ISSN	978-1-4799-7944-8
DOI	10.1109/PVSC.2015.7356380
Fecha inicio congreso	14/06/2015
Fecha fin congreso	19/06/2015
Desde la página	1
Hasta la página	6
Título de las actas	Proc. 42nd IEEE PVSC

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