Memorias de investigación
Communications at congresses:
Evolution of the silicon bottom cell photovoltaic behavior during III-V on Si multi-junction solar cells production
Year:2015
Research Areas
  • Solar cells,
  • Technology of devices for engineering
Information
Abstract
The evolution of the Si bulk minority carrier lifetime during the heteroepitaxial growth of III-V on Si multi-junction solar cell structures via metal-organic vapor phase epitaxy has been analyzed. Initially, the emitter formation produces important lifetime degradation. Nevertheless, a progressive recovery was observed during the growth of the metamorphic GaAsP/Si structure. A step-wise mechanism has been proposed to explain the lifetime evolution observed during this process. The initial lifetime degradation is believed to be related to the formation of thermally-induced defects within the Si bulk. These defects are subsequently passivated by fast-diffusing atomic hydrogen -coming from precursor (i.e. PH3 and AsH3) pyrolysis- during the subsequent III-V growth. These results indicate that the MOVPE environment used to create the III-V/Si solar cell structures has a dynamic impact on the minority carrier lifetime. Consequently, designing processes that promote the recovery of the lifetime is a must to support the production of high-quality III-V/Si solar cells.
International
Si
Congress
42nd IEEE Photovoltaic Specialists Conference
960
Place
New Orleans, LA (EEUU)
Reviewers
Si
ISBN/ISSN
978-1-4799-7944-8
10.1109/PVSC.2015.7356380
Start Date
14/06/2015
End Date
19/06/2015
From page
1
To page
6
Proc. 42nd IEEE PVSC
Participants
Research Group, Departaments and Institutes related
  • Creador: Grupo de Investigación: Semiconductores III-V
  • Departamento: Electrónica Física
  • Centro o Instituto I+D+i: Instituto de Energía Solar