Abstract
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Dual-junction solar cells formed by a GaAsP cell on a silicon bottom cell seem to be attractive candidates to materialize the long sought-for integration of III-V materials on Si for photovoltaic applications. In this study, we analyze several factors for the optimization of the bottom cell, namely, 1) the emitter formation as a result of phosphorus diffusion; 2) the growth of a high quality GaP nucleation layer; and 3) the process impact on the bottom subcell PV properties. | |
International
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Si |
Congress
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10th Spanish Conference on Electron Devices (CDE-2015) |
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960 |
Place
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Aranjuez, Madrid |
Reviewers
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Si |
ISBN/ISSN
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978-1-4799-8108-3 |
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10.1109/CDE.2015.7087512 |
Start Date
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11/02/2015 |
End Date
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13/02/2015 |
From page
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1 |
To page
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4 |
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Proc. IEEE CDE-2015 |