Memorias de investigación
Communications at congresses:
Optimizing diffusion, morphology and minority carrier lifetime in silicon for GaAsP/Si dual-junction solar cells
Year:2015
Research Areas
  • Solar cells,
  • Technology of devices for engineering
Information
Abstract
Dual-junction solar cells formed by a GaAsP cell on a silicon bottom cell seem to be attractive candidates to materialize the long sought-for integration of III-V materials on Si for photovoltaic applications. In this study, we analyze several factors for the optimization of the bottom cell, namely, 1) the emitter formation as a result of phosphorus diffusion; 2) the growth of a high quality GaP nucleation layer; and 3) the process impact on the bottom subcell PV properties.
International
Si
Congress
10th Spanish Conference on Electron Devices (CDE-2015)
960
Place
Aranjuez, Madrid
Reviewers
Si
ISBN/ISSN
978-1-4799-8108-3
10.1109/CDE.2015.7087512
Start Date
11/02/2015
End Date
13/02/2015
From page
1
To page
4
Proc. IEEE CDE-2015
Participants
Research Group, Departaments and Institutes related
  • Creador: Grupo de Investigación: Semiconductores III-V
  • Centro o Instituto I+D+i: Instituto de Energía Solar
  • Departamento: Electrónica Física