Memorias de investigación
Research Publications in journals:
Temperature accelerated life test on commercial concentrator III?V triple-junction solar cells and reliability analysis as a function of the operating temperature
Year:2015

Research Areas
  • Solar cells

Information
Abstract
A temperature accelerated life test on commercial concentrator lattice-matched GaInP/GaInAs/Ge triple-junction solar cells has been carried out. The acceleration of the aging has been accomplished by subjecting the solar cells at temperatures markedly higher than the nominal working temperature inside a concentrator, and the nominal photo-current condition (820 X) has been emulated by injecting current in darkness. Three tests at different temperatures have been carried out. The failure distributions across the three test temperatures have been fitted to an Arrhenius?Weibull model. An Arrhenius activation energy of 1.59?eV was determined from the fit. The reliability functions and parameters of these solar cells at two nominal working conditions (80?and?100?°C) have been obtained. In both cases, the instantaneous failure rate function monotonically increases, that is, the failures are of the wear-out kind. We have also observed that the reliability data are very sensitive to the nominal temperature condition. In fact, at a nominal working condition of 820 X and 80?°C, assuming that the concentration module works 5?h per day, the warranty time obtained for a failure population of 5% has been 113?years. However, for a nominal working condition of 820 X and 100?°C, the warranty time obtained for a failure population of 5% has been 7?years. Therefore, in order to offer a long-term warranty, the working temperature could be a key factor in the design of the concentration photovoltaic systems.
International
Si
JCR
Si
Title
Progress in Photovoltaics
ISBN
1062-7995
Impact factor JCR
9,696
Impact info
Volume
23
10.1002/pip.2461
Journal number
5
From page
559
To page
569
Month
SIN MES
Ranking
Participants

Research Group, Departaments and Institutes related
  • Creador: Grupo de Investigación: Semiconductores III-V
  • Centro o Instituto I+D+i: Instituto de Energía Solar
  • Departamento: Electrónica Física