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Descripción
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| Reflectance Anisotropy Spectroscopy (RAS) was employed to determine the optimal specific molar flow of Sb needed to grow GaInP with a given order parameter by MOVPE. The RAS signature of GaInP surfaces exposed to different Sb/P molar flow ratios were recorded, and the RAS peak at 3.02 eV provided a feature that was sensitive to the amount of Sb on the surface. The range of Sb/P ratios over which Sb acts as a surfactant was determined using the RA intensity of this peak, and different GaInP layers were grown using different Sb/P ratios. The order parameter of the resulting layers was measured by PL at 20 K. This procedure may be extensible to the calibration of surfactant-mediated growth of other materials exhibiting characteristic RAS signatures. | |
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Internacional
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Si |
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JCR del ISI
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Si |
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Título de la revista
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Journal of Crystal Growth |
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ISSN
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0022-0248 |
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Factor de impacto JCR
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1,693 |
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Información de impacto
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Volumen
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426 |
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DOI
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10.1016/j.jcrysgro.2015.05.020 |
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Número de revista
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Desde la página
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71 |
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Hasta la página
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74 |
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Mes
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SIN MES |
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Ranking
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