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Memorias de investigación
Artículos en revistas:
Implications of redesigned, high-radiative-efficiency GaInP junctions on III-V multijunction concentrator solar cells
Año:2015
Áreas de investigación
  • Células solares
Datos
Descripción
Nonradiative recombination in inverted GaInP junctions is dramatically reduced using a rear-heterojunction design rather than the more traditional thin-emitter homojunction design. When this GaInP junction design is included in inverted multijunction solar cells, the high radiative efficiency translates into both higher subcell voltage and high luminescence coupling to underlying subcells, both of which contribute to improved performance. Subcell voltages within two and four junction devices are measured by electroluminescence and the internal radiative efficiency is quantified as a function of recombination current using optical modeling. The performance of these concentrator multijunction devices is compared with the Shockley?Queisser detailed-balance radiative limit, as well as an internal radiative limit, which considers the effects of the actual optical environment in which a perfect junction may exist.
Internacional
Si
JCR del ISI
Si
Título de la revista
Ieee Journal of Photovoltaics
ISSN
2156-3381
Factor de impacto JCR
3
Información de impacto
Volumen
5
DOI
10.1109/JPHOTOV.2014.2361014
Número de revista
1
Desde la página
418
Hasta la página
424
Mes
SIN MES
Ranking
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Participantes
  • Autor: J.F. Geisz
  • Autor: M.A. Steiner
  • Autor: Ivan Garcia Vara (UPM)
  • Autor: R.M. France
  • Autor: D.J. Friedman
  • Autor: S.R. Kurtz
Grupos de investigación, Departamentos, Centros e Institutos de I+D+i relacionados
  • Creador: Grupo de Investigación: Semiconductores III-V
  • Centro o Instituto I+D+i: Instituto de Energía Solar
  • Departamento: Electrónica Física
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