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Abstract
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| Polysilicon production costs contribute approximately to 25?33% of the overall cost of the solar panels and a similar fraction of the total energy invested in their fabrication. Understanding the energy losses and the behaviour of process temperature is an essential requirement as one moves forward to design and build large scale polysilicon manufacturing plants. In this paper we present thermal models for two processes for poly production, viz., the Siemens process using trichlorosilane (TCS) as precursor and the fluid bed process using silane (monosilane, MS). We validate the models with some experimental measurements on prototype laboratory reactors relating the temperature profiles to product quality. A model sensitivity analysis is also performed, and the effects of some key parameters such as reactor wall emissivity and gas distributor temperature, on temperature distribution and product quality are examined. The information presented in this paper is useful for further understanding of the strengths and weaknesses of both deposition technologies, and will help in optimal temperature profiling of these systems aiming at lowering production costs without compromising the solar cell quality. | |
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International
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Si |
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JCR
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Si |
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Title
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Journal of Crystal Growth |
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ISBN
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0022-0248 |
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Impact factor JCR
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1,693 |
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Impact info
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Volume
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431 |
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10.1016/j.jcrysgro.2015.08.023 |
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Journal number
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From page
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1 |
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To page
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9 |
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Month
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SIN MES |
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Ranking
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