Memorias de investigación
Research Publications in journals:
Effect of electrically inactive posphorus versus electrically active phosphorus oniron gettering
Year:2015
Research Areas
  • Technology of devices for engineering
Information
Abstract
In this study we investigate the efficacy of iron gettering as a function of electrically inactive phosphorus in the emitter in combination with low temperature annealing steps. To achieve different amounts of electrically inactive phosphorus in the emitter a highly doped PSG produced emitter with a large plateau depth of electrical active phosphorus is etched back stepwise by a wet-chemical procedure. Therewith we achieve a gradual reduction in electrically inactive phosphorus with small changes in electrically active phosphorus (?Rsh < 4 ?/sq). After this step, the wafers with different emitters have been annealed at 700 °C for 30 min and the content of Feiin the bulk has been measured using QSS-PC. The results show, (i) that for higher amounts of electrically inactive phosphorusa stronger iron gettering effect can be observed and (ii) that an additional annealing step leads to a significant change of Fei. This means, (i) that anelectricallyinactive phosphorus concentration dependence for iron gettering is observed and (ii) additional annealing steps, below the usual diffusion temperature of phosphorus, can be used to reduce interstitial iron in highly contaminated wafers further.
International
Si
JCR
No
Title
Energy Procedia
ISBN
1876-6102
Impact factor JCR
Impact info
Volume
77
10.1016/j.egypro.2015.07.044
Journal number
From page
311
To page
315
Month
SIN MES
Ranking
Participants
  • Autor: Ana Peral Boiza UPM
  • Autor: A. Dastgheib-Shirazi
  • Autor: H. Wagner
  • Autor: G. Hahn
  • Autor: Carlos del Cañizo Nadal UPM
Research Group, Departaments and Institutes related
  • Creador: Grupo de Investigación: Silicio y Nuevos Conceptos para Células Solares
  • Centro o Instituto I+D+i: Instituto de Energía Solar
  • Departamento: Electrónica Física