Memorias de investigación
Artículos en revistas:
Effects of the d-donor level of vanadium on the properties of Zn1-xVxO films
Año:2015
Áreas de investigación
  • Tecnología de dispositivos para ingeniería eléctrica y electrónica
Datos
Descripción
We report the effect of d-levels of vanadium atoms on the electronic band structure of ZnO. Polycrystalline layers of Zn 1?xVxO with 0?x?0.08 were synthesized using magnetron sputtering technique. Electrical measurements show that electron concentration increases with vanadium up to x == 0.04 and then decreases and films become insulating for x?>?0.06. Optical characterization reveals that the absorption edge shifts to higher energy, while the photoluminescence (PL) peak shows a shift to lower energy with increasing vanadium content. This unusual optical behavior can be explained by an anticrossing interaction between the vanadium d-levels and the conduction band (CB) of ZnO. The interaction results in an upward shift of unoccupied CB ( E+E+ ) and the downward shift of the fully occupied E?E? band derived from the vanadium d-levels. The composition dependence of optical absorption edge ( E+E+ ) and PL peak ( E?E? ) can be fitted using the Band Anticrossing model with the vanadium d-level located at 0.13?eV below CB of ZnO and a coupling constant of 0.65?eV.
Internacional
Si
JCR del ISI
Si
Título de la revista
Applied Physics Letters
ISSN
0003-6951
Factor de impacto JCR
3,515
Información de impacto
Volumen
106
DOI
10.1063/1.4919791
Número de revista
18
Desde la página
182101-1
Hasta la página
182101-4
Mes
SIN MES
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Grupos de investigación, Departamentos, Centros e Institutos de I+D+i relacionados
  • Creador: Grupo de Investigación: Silicio y Nuevos Conceptos para Células Solares
  • Centro o Instituto I+D+i: Instituto de Energía Solar
  • Departamento: Tecnología Fotónica y Bioingeniería