Memorias de investigación
Communications at congresses:
Reliability assessment of AlGaN/GaN HEMTs with different in situ cap layers under gate and drain bias stress
Year:2015

Research Areas
  • Electronic technology and of the communications

Information
Abstract
Relacionado con línea de investigación del GDS DEL ISOM
International
Si
Congress
39th Int Workshop on Compound Semiconductors and Integrated Circuits, Wocsdice 2015. Smolenice (Slovakia), 2015
960
Place
Smolenice (Slovakia), 2015
Reviewers
Si
ISBN/ISSN
0000000000000
Start Date
08/06/2015
End Date
10/06/2015
From page
0
To page
3
Proceedings
Participants

Research Group, Departaments and Institutes related
  • Creador: Grupo de Investigación: Grupo de Dispositivos Semiconductores del ISOM
  • Departamento: Ingeniería Electrónica
  • Centro o Instituto I+D+i: Instituto Universitario de Sistemas Optoelectrónicos y Microtecnología