Descripción
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A series of photonic crystal structures are optimized for a photon enhanced thermionic emitter. With realistic parameter values to describe a p-type GaAs device we find an efficiency above 10%. The light-trapping structures increases the performance by 2% over an optimal bilayer anti-reflective coating. We find a device efficiency very close to the case of a Lambertian absorber, but below its maximum performance. To prevent an efficiency below 10% the vacuum gap must be dimensioned according to the concentration factor of the solar irradiance. | |
Internacional
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Si |
JCR del ISI
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Si |
Título de la revista
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Optics Express |
ISSN
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1094-4087 |
Factor de impacto JCR
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3,525 |
Información de impacto
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Volumen
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23 |
DOI
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10.1364/oe.23.0a1220 |
Número de revista
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19 |
Desde la página
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A1220 |
Hasta la página
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A123 |
Mes
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SIN MES |
Ranking
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