|
Descripción
|
|
|---|---|
| In this study we investigate the dissolution of electrically inactive phosphorus complexes by low temperature annealing after the POCl3 diffusion process. This has the immediate consequence that the existing near-surface emitter volume SRH recombination can be reduced. Thereby, a significant reduction of emitter saturation current density j0E is achieved without driving the emitter further into the silicon substrate. For short-term temperature treatments well below the POCl3 diffusion temperature, a reduction of up to -60 fA/cm2 has been achieved. This study increases our understanding of the formation and dissolution of electrically inactive phosphorus complexes during post-annealing processes. | |
|
Internacional
|
Si |
|
Nombre congreso
|
5th International Conference on Silicon Photovoltaics, SiliconPV 2015 |
|
Tipo de participación
|
960 |
|
Lugar del congreso
|
Konstanz, Germany |
|
Revisores
|
Si |
|
ISBN o ISSN
|
1876-6102 |
|
DOI
|
10.1016/j.egypro.2015.07.040 |
|
Fecha inicio congreso
|
23/03/2015 |
|
Fecha fin congreso
|
25/03/2015 |
|
Desde la página
|
286 |
|
Hasta la página
|
290 |
|
Título de las actas
|
Energy Procedia - Special Issue. Vol. 77 |