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Abstract
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| In this study we investigate the dissolution of electrically inactive phosphorus complexes by low temperature annealing after the POCl3 diffusion process. This has the immediate consequence that the existing near-surface emitter volume SRH recombination can be reduced. Thereby, a significant reduction of emitter saturation current density j0E is achieved without driving the emitter further into the silicon substrate. For short-term temperature treatments well below the POCl3 diffusion temperature, a reduction of up to -60 fA/cm2 has been achieved. This study increases our understanding of the formation and dissolution of electrically inactive phosphorus complexes during post-annealing processes. | |
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International
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Si |
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Congress
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5th International Conference on Silicon Photovoltaics, SiliconPV 2015 |
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960 |
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Place
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Konstanz, Germany |
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Reviewers
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Si |
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ISBN/ISSN
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1876-6102 |
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10.1016/j.egypro.2015.07.040 |
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Start Date
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23/03/2015 |
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End Date
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25/03/2015 |
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From page
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286 |
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To page
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290 |
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Energy Procedia - Special Issue. Vol. 77 |