Memorias de investigación
Artículos en revistas:
Influence of liquid properties on the performance of S0-mode Lamb wave sensors: A theoretical analysis
Año:2015

Áreas de investigación
  • Tecnología electrónica y de las comunicaciones

Datos
Descripción
Sensors based on thin film electroacoustic (TEA) devices have emerged as a promising alternative toquartz crystal microbalance and surface acoustic wave devices, in view of sensibility, miniaturizationand easy integration. TEA devices include quasi-shear film bulk acoustic resonators (QS-FBAR) and S0mode Lamb wave resonators (S0-LWR) based on AlN films. Despite the work done on the application ofTEA devices as in-liquid biological and chemical sensors, a theoretical framework for S0-LWRs properlydescribing their sensing mechanisms is still needed. Here we validate a finite element analysis modelon QS-FBARs and study the sensing mechanisms of S0-LWRs in liquid media. We show that S0-LWRscan sense changes in the dielectric permittivity of the liquid and demonstrate different sensitivities toviscosity and density. A complementary assessment of the S0-LWRs losses, dependent in a non-specificmanner on the square root of the density viscosity product, provides the ability to discriminate densityfrom viscosity changes on the entire device surface. Finally, with an S0-LWR optimization study we showthat resolution improves with the decrease of the membrane thickness; however, a trade-off betweensensitivity, quality factor and membrane fragility has to be considered.
Internacional
Si
JCR del ISI
Si
Título de la revista
Sensors And Actuators B-Chemical
ISSN
0925-4005
Factor de impacto JCR
3,84
Información de impacto
Volumen
208
DOI
10.1016/j.snb.2014.11.026
Número de revista
208
Desde la página
212
Hasta la página
219
Mes
SIN MES
Ranking

Esta actividad pertenece a memorias de investigación

Participantes

Grupos de investigación, Departamentos, Centros e Institutos de I+D+i relacionados
  • Creador: Grupo de Investigación: Microsistemas y Materiales Electrónicos
  • Departamento: Ingeniería Electrónica
  • Centro o Instituto I+D+i: Centro de Materiales y Dispositivos Avanzados para Tecnologías de Información y Comunicaciones