Observatorio de I+D+i UPM

Descripción
New CMOS technologies such as SOI or FinFET are expected to enhance SRAM radiation-induced soft error rates thanks to a reduction on the charge collected as the devices get smaller. In this work we analyze how the radiation hardening capabilities of SRAMs are affected when process variations are considered by simulating cells using a predictive FinFET technology. The results show that even if the average critical charge to which SRAM cells are vulnerable is enhanced by process variations, its widened spread leads to an increase of the soft error rate by more than 40% as the technology node is scaled down to 7nm.
Internacional	Si
Nombre congreso	NANOARCH 2015
Tipo de participación	970
Lugar del congreso	Boston, E.E.U.U.
Revisores	Si
ISBN o ISSN	2327-8218
DOI	10.1109/NANOARCH.2015.7180596
Fecha inicio congreso	08/07/2015
Fecha fin congreso	10/07/2015
Desde la página	112
Hasta la página	117
Título de las actas	Proceedings of the 2015 IEEE/ACM International Symposium on Nanoscale Architectures

Esta actividad pertenece a memorias de investigación

• Autor: Pablo Royer Del Barrio (UPM)
• Autor: Fernando Garcia Redondo (UPM)
• Autor: M. Luisa Lopez Vallejo (UPM)

• Creador: Grupo de Investigación: Laboratorio de Sistemas Integrados (LSI)
• Departamento: Ingeniería Electrónica