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Memorias de investigación
Ponencias en congresos:
A Thermal Adaptive Scheme for Reliable Write Operation on RRAM Based Architectures
Año:2015
Áreas de investigación
  • Diseño microelectrónico
Datos
Descripción
Resistive RAMs (RRAMs) are one of the most promising alternatives to future storage and neuromorphic computing systems. However, the behavior of RRAM highly depends on voltage, crossbar design and operation temperature. Actually, the circuit temperature becomes one of the most critical issues in fast memories during writing operations. In this paper we propose a novel thermal-adaptive RRAM writing scheme, applicable to crossbar memories, whose smart operation is able to mitigate the writing errors induced by temperature variations. Using a sensing-acting scheme our system is able to improve the memory reliability without affecting the writing/reading performance. Moreover, the proposed architecture is compatible with most proposed write/read designs making achievable multibit storage, which requires extremely accurate operations.
Internacional
Si
Nombre congreso
Computer Design (ICCD), 2015 33rd IEEE International Conference on
Tipo de participación
960
Lugar del congreso
Nueva York, EEUU
Revisores
Si
ISBN o ISSN
978-1-4673-7165-0
DOI
10.1109/ICCD.2015.7357126
Fecha inicio congreso
18/10/2015
Fecha fin congreso
21/10/2015
Desde la página
367
Hasta la página
374
Título de las actas
Computer Design (ICCD), 2015 33rd IEEE International Conference on
Esta actividad pertenece a memorias de investigación
Participantes
  • Autor: Fernando Garcia Redondo (UPM)
  • Autor: M. Luisa Lopez Vallejo (UPM)
  • Autor: Pablo Ituero Herrero (UPM)
Grupos de investigación, Departamentos, Centros e Institutos de I+D+i relacionados
  • Creador: Grupo de Investigación: Laboratorio de Sistemas Integrados (LSI)
  • Departamento: Ingeniería Electrónica
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