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Descripción
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| Resistive RAMs (RRAMs) are one of the most promising alternatives to future storage and neuromorphic computing systems. However, the behavior of RRAM highly depends on voltage, crossbar design and operation temperature. Actually, the circuit temperature becomes one of the most critical issues in fast memories during writing operations. In this paper we propose a novel thermal-adaptive RRAM writing scheme, applicable to crossbar memories, whose smart operation is able to mitigate the writing errors induced by temperature variations. Using a sensing-acting scheme our system is able to improve the memory reliability without affecting the writing/reading performance. Moreover, the proposed architecture is compatible with most proposed write/read designs making achievable multibit storage, which requires extremely accurate operations. | |
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Internacional
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Si |
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Nombre congreso
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Computer Design (ICCD), 2015 33rd IEEE International Conference on |
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Tipo de participación
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960 |
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Lugar del congreso
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Nueva York, EEUU |
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Revisores
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Si |
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ISBN o ISSN
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978-1-4673-7165-0 |
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DOI
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10.1109/ICCD.2015.7357126 |
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Fecha inicio congreso
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18/10/2015 |
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Fecha fin congreso
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21/10/2015 |
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Desde la página
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367 |
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Hasta la página
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374 |
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Título de las actas
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Computer Design (ICCD), 2015 33rd IEEE International Conference on |