Memorias de investigación
Research Publications in journals:
Thermal stability study of AlGaN/GaN MOS-HEMTs using Gd2O3 as gate dielectric
Year:2015

Research Areas

Information
Abstract
0
International
Si
JCR
Si
Title
PROCEEDINGS OF THE 2015 10TH SPANISH CONFERENCE ON ELECTRON DEVICES (CDE)
ISBN
2163-4971
Impact factor JCR
0
Impact info
Volume
Journal number
From page
78
To page
+
Month
Ranking
0
Participants
  • Autor: z. gao UPM
  • Autor: m. f. romero UPM
  • Autor: f. calle UPM
  • Autor: m. a. pampillon
  • Autor: e. san andres

Research Group, Departaments and Institutes related
  • Creador: No seleccionado
  • Departamento: Ingeniería Electrónica
  • Centro o Instituto I+D+i: Instituto Universitario de Sistemas Optoelectrónicos y Microtecnología