Descripción
|
|
---|---|
The measurement of the external quantum efficiency (EQE) of low bandgap subcells in a multijunction solar cell can be sometimes problematic. In particular, this paper describes a set of cases where the EQE of a Ge subcell in a conventional GaInP/GaInAs/Ge triple-junction solar cell cannot be fully measured. We describe the way to identify each case by tracing the I-V curve under the same light-bias conditions applied for the EQE measurement, together with the strategies that could be implemented to attain the best possible measurement of the EQE of the Ge subcell. | |
Internacional
|
Si |
Nombre congreso
|
11th International Conference on Concentrator Photovoltaic Systems - CPV-11 |
Tipo de participación
|
960 |
Lugar del congreso
|
Aix-les-Bains, France |
Revisores
|
Si |
ISBN o ISSN
|
0094-243X |
DOI
|
http://dx.doi.org/10.1063/1.4931510 |
Fecha inicio congreso
|
13/04/2015 |
Fecha fin congreso
|
15/04/2015 |
Desde la página
|
500021 |
Hasta la página
|
500026 |
Título de las actas
|
AIP Conference Proceedings Vol. 1679 |