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Descripción
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| Light to hydrogen conversion via water splitting is of immense interest as a clean, storable, and renewable energy source (Tachibana et al., 2012 [1];Maeda andDomen,2010 [2]; van de Krol et al., 2008 [3]; van Dorp et al., 2009 [4];Kudo andMiseki,2009 [5]) but efficientmaterials need to be found. To solve, InGaN has properties ideally suited and we demonstrate here that epitaxial InN quantum dots (QDs) more than double the photoelectrochemical (PEC) water splitting efficiency of an In0.54Ga0.46N photoelectrode. The InN/In0.54Ga0.46N-QDs-photoelectrode reveals a maximum incident-photon-to- current-conversion efficiency (IPCE) of up to 56% at a wavelength of 600 nmwith hydrogen generation rate of 133 mmol h?1 cm?2 at zero voltage under illumination of a 1000W Xenon arc lamp. The bare In0.54Ga0.46N-layer-photoelectrode reveals a much lower IPCE of 24% with hydrogen generation rate of 59 mmol h?1 cm?2. | |
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Internacional
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Si |
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JCR del ISI
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Si |
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Título de la revista
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Nano Energy |
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ISSN
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2211-2855 |
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Factor de impacto JCR
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10,325 |
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Información de impacto
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Datos JCR del año 2014 |
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Volumen
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DOI
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10.1016/j.nanoen.2015.02.017 |
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Número de revista
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Desde la página
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291 |
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Hasta la página
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297 |
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Mes
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SIN MES |
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Ranking
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