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Abstract
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| This work is focused on the implementation of a simple digital system in Galium Nitride technology. In speed, temperature and power handling, GaN is set to take over as silicon power devices reach their limits. GaN is the technology that will allow us to implement essential future cleantech innovations where e?ciency is a key requirement. GaN devices o er ?ve key characteristics: high dielectric strength, high operating temperature, high current density, high speed switching and low on-resistance. These characteristics are due to the properties of GaN, which, compared to silicon, o ers ten times higher electrical breakdown characteristics, three times the bandgap, and exceptional carrier mobility. So far, GaN devices have been fabricated and tested but without a high level of inte- gration. This work is a step forward in the integration of thousands of GaN transistors in the same design. The implementation of a digital system also requires the development and integration of the Computer-Aided Design tools used by the electronic industry to design digital electronic systems. The standard cells-based design allows to automate many of the processes of elec- tronic system design, reducing the time to market signi?cantly. Therefore, in this work, a standard cell library has been designed and used to implement the ?nal microcontroller. In order to test the feasibility of GaN technology for its used in digital design with high level of integration, we have chosen to implement a well-known commercial device, PIC10F200. This device was developed by Microchip Technology Inc. It is the smallest microcontroller but it is suitable for a ?rst approach to digital GaN based digital design. The next step of this work is to fabricate and test the design. The characterization will be focused on two di erent test: ?rst, an electrical test to verify the correct behavior of the microcontroller and ?nally, the temperature test. The temperature test will try to push the device into a temperature range where actual devices based on silicon do not work, 300oC-400oC. What it is intent to be the highest contribution of this work. | |
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International
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Si |
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Place
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Boston, MA, EEUU |
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Type
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Start Date
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23/05/2016 |
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End Date
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18/08/2016 |