Descripción
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Tandem GaInP/GaAs//Si(inactive) solar cells were manufactured by direct wafer bonding under vacuum. At this early stage, an inactive silicon substrate was used (i.e. n+ Si substrate instead of an active n-p Si junction). Bonded devices presented an Sshaped J-V curve with a kink close to Voc caused by a built-in potential barrier at the III-V//Si interface that reduces the fill factor and therefore the efficiency of the device by 7% compared to the stand-alone GaInP/GaAs tandem cells. Nevertheless, losses in Jsc and Voc caused by the bonding process, account for less than 10%. AlGaAs single junction cells, designed to be bonded on a silicon cell for low concentrator photovoltaics (LCPV), were also manufactured reaching an efficiency of 15.9% under one sun AM1.5G spectrum for a 2 cm² cell. | |
Internacional
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Si |
JCR del ISI
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No |
Título de la revista
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Energy Procedia |
ISSN
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1876-6102 |
Factor de impacto JCR
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Información de impacto
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Volumen
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92 |
DOI
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10.1016/j.egypro.2016.07.066 |
Número de revista
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Desde la página
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242 |
Hasta la página
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247 |
Mes
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SIN MES |
Ranking
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