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Descripción
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| We studied the growth of InAs/InGaP quantum dot (QD) solar cells with near ideal bandgaps for intermediate band solar cells. Using a solid-source molecular beam epitaxy system, the evolution of InAs QDs grown on an InGaP buffer layer was examined as a function of InAs coverage and growth temperature. QDs were initiated with defective clusters for InAs deposition as small as 0.3 monolayer. The cross diffusion of In atoms and As?P exchange between InAs and the InGaP buffer layer could be responsible for the formation of coherent QDs and large defective clusters. An AlGaAs interlayer was inserted between InAs and the InGaP buffer layer to prevent the surface exchange reactions between InAs and InGaP. As a result, InAs QDs with a density of 1×1011 cm?2 have been demonstrated with stronger photoluminescence emission compared to those with the GaAs interlayer. This growth technique was applied to fabricate InAs/InGaP QD solar cells. Post-growth annealing treatment was also investigated to improve the performance of QD solar cells. | |
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Internacional
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Si |
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JCR del ISI
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Si |
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Título de la revista
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Solar Energy Materials And Solar Cells |
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ISSN
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0927-0248 |
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Factor de impacto JCR
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5,03 |
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Información de impacto
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Volumen
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144 |
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DOI
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10.1016/j.solmat.2015.08.031 |
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Número de revista
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Desde la página
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96 |
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Hasta la página
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101 |
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Mes
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SIN MES |
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Ranking
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