Observatorio de I+D+i UPM

Descripción
A new approach of a tandem silicon technology is presented. That is based on improving a classical IBC structure in which top and bottom cells are jointed on. The electrical connection of this tandem device is not the classical series connected but the voltage matched approach. The final device would be of a maximum efficiency of 39.5% but it is more tolerant to light spectrum, degradation and not optimum materials than conventional series connected and using well known materials for each level an 30 to 32% efficiency level sounds possible.
Internacional	Si
Nombre congreso	43rd IEEE Photovoltaic Specialists Conference
Tipo de participación	960
Lugar del congreso	Portland (OR), U.S.A.
Revisores	Si
ISBN o ISSN	978-1-5090-2724-8
DOI	10.1109/pvsc.2016.7749680
Fecha inicio congreso	05/06/2016
Fecha fin congreso	10/06/2016
Desde la página	651
Hasta la página	656
Título de las actas	Proc. 43rd IEEE PVSC

Esta actividad pertenece a memorias de investigación

• Autor: J.C. Jimeno
• Autor: R. Gutierrez
• Autor: V. Fano
• Autor: Carlos del Cañizo Nadal (UPM)
• Autor: A. Habib
• Autor: M.A. Rasool
• Autor: A. Otaegi

• Creador: Grupo de Investigación: Silicio y Nuevos Conceptos para Células Solares
• Departamento: Electrónica Física
• Centro o Instituto I+D+i: Instituto de Energía Solar