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Memorias de investigación
Artículos en revistas:
Physics-based analytical model for input, output and reverse capacitance of a GaN HEMT with the field-plate structure
Año:2017
Áreas de investigación
  • Ingenierías
Datos
Descripción
This paper presents an analytical model for input, output and reverse capacitance of a normally-on AlGaN/GaN HEMT with a gate field-plate structure, when the device is in the subthreshold regime. Together with the existing model for the output I-V characteristics, the proposed capacitance model provides the complete set of analytical equations that relate the physical design parameters to the electrical characteristics of the device. The model was verified by the experimental characterization of a HEMT. In comparison to the physics-based models implemented in Finite Element Analysis tools, the obtained capacitance model has substantially lower level of complexity and therefore, it is more suitable for implementation into iterative design optimization algorithms. In order to verify the proposed model for such usage, the prototype of a high-frequency buck converter was built, using previously modelled GaN HEMT as the main switch. The hybrid analytical-behavioral power loss model of a high-frequency buck converter was implemented into Simplorer simulation tool, using the proposed physics-based model as the device description for the capacitive part. The efficiency measurements showed good agreement with the simulation results, even at 20MHz of switching frequency in the low range of the output power.
Internacional
Si
JCR del ISI
Si
Título de la revista
Ieee Transactions on Power Electronics
ISSN
0885-8993
Factor de impacto JCR
4,953
Información de impacto
Datos JCR del año 2015
Volumen
32
DOI
10.1109/TPEL.2016.2569404
Número de revista
3
Desde la página
2189
Hasta la página
2202
Mes
MARZO
Ranking
Esta actividad pertenece a memorias de investigación
Participantes
  • Autor: Dejana Cucak (UPM)
  • Autor: Miroslav Vasic (UPM)
  • Autor: Oscar Garcia Suarez (UPM)
  • Autor: Jesus Angel Oliver Ramirez (UPM)
  • Autor: Pedro Alou Cervera (UPM)
  • Autor: Jose Antonio Cobos Marquez (UPM)
  • Autor: Ashu Wang
  • Autor: Sara Martin Horcajo (UPM)
  • Autor: Fatima Romero Rojo (UPM)
  • Autor: Fernando Calle Gomez (UPM)
Grupos de investigación, Departamentos, Centros e Institutos de I+D+i relacionados
  • Creador: Centro o Instituto I+D+i: Centro de Electrónica Industrial. CEI
  • Departamento: Automática, Ingeniería Eléctrica y Electrónica e Informática Industrial
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