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Memorias de investigación
Conferencias:
Optimization of a Gallium Nitride HEMT design for a high frequency DC-DC converter application.
Año:2016
Áreas de investigación
  • Ingenierías
Datos
Descripción
This paper presents the optimization of the AlGaN/GaN HEMT design for a high frequency switching application, using previously developed physical model of the device. Since the obtained physical model provided the relations between the design parameters such as gate electrode width and length, the field plate thickness and width etc. on one hand and the on-resistance together with parasitic capacitances of the HEMT on the other, it was possible to vary the design parameters by minimizing the conduction and switching losses in the converter. The initial optimization of the design showed maximum efficiency improvement of 10% at 20MHz of switching frequency, comparing to the nominal design of the device. Still, the estimation of the conduction losses at 20MHz showed that they have negligible values comparing to the total losses in the device, implying that further optimization should be focused on the capacitance decrease by penalizing the value for the on-resistance. The final design of the HEMT optimized for high frequency buck converter used in Envelope Tracking techniques will be presented in the final version of the paper.
Internacional
Si
ISSN o ISBN
978-3-8007-4171-7
Entidad relacionada
IEEE
Nacionalidad Entidad
Sin nacionalidad
Lugar del congreso
Germany
Esta actividad pertenece a memorias de investigación
Participantes
  • Autor: Dejana Cucak (UPM)
  • Autor: Miroslav Vasic (UPM)
  • Autor: Oscar Garcia Suarez (UPM)
  • Autor: Jesus Angel Oliver Ramirez (UPM)
  • Autor: Pedro Alou Cervera (UPM)
  • Autor: Jose Antonio Cobos Marquez (UPM)
Grupos de investigación, Departamentos, Centros e Institutos de I+D+i relacionados
  • Creador: Departamento: Automática, Ingeniería Eléctrica y Electrónica e Informática Industrial
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