Memorias de investigación
Artículos en revistas:
Frequency characterization of AlN piezoelectric resonators
Año:2007

Áreas de investigación
  • Industria electrónica

Datos
Descripción
In this paper, we analyze the vibrational spectra of mechanical resonators actuated piezoelectrically with aluminum nitride (AlN) films. The microresonators consist in bimorph cantilevers with different lengths containing a piezoelectric metal/AlN/metal stack supported by a silicon nitride structural layer. The thicknesses of both the AlN and Si3N4 layers are varied between 0.3 mum and 1 mum to study their influence on the mechanical response of the cantilevers. The motion of the cantilevers electrically driven is first assessed by optical laser interferometry; resonant frequencies varying between 100 kHz and 8 MHz are obtained. Additionally, many of the vibrational modes are detected by measuring the changes of the electrical impedance at the resonant frequencies. The mass detection factor of the cantilevers is assessed by measuring the frequency shift after mass loading with thin SiO2 layers. A value of 0.18 fg/Hz is obtained for vibrational modes around MHz.
Internacional
Si
JCR del ISI
No
Título de la revista
2007 IEEE International Frequency Control Symposium Proc.
ISSN
1075-6787
Factor de impacto JCR
0
Información de impacto
Volumen
DOI
Número de revista
0
Desde la página
374
Hasta la página
377
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Grupos de investigación, Departamentos, Centros e Institutos de I+D+i relacionados
  • Creador: Grupo de Investigación: Microsistemas y materiales electrónicos
  • Departamento: Tecnología Electrónica
  • Departamento: Sistemas Electrónicos y de Control
  • Departamento: Ingeniería Electrónica