Ponencias en congresos:
Study of RF-circuit linearity performance of GaN HEMT technology using the MVSG compact device model
Study of RF-circuit linearity performance of GaN HEMT technology using the MVSG compact device model
Año:2016
Áreas de investigación
-
Tecnología electrónica y de las comunicaciones
Datos
|
Descripción
|
|
|---|---|
| A detailed linearity performance analysis of GaN-HEMT technology is performed spanning technology-device-circuit level using physics-based MVSG-model as a simulation tool. The model includes the physics of charge and carrier transport in different regions of the device and includes thermal and charge-trapping effects that are verified against a suite of device-level measurements including large-signal linearity benchmarking. Technology sources of device-non-linearity are identified to aid process-design and circuit techniques for linearity improvement are demonstrated using a PA circuit designed using the MVSG model. | |
|
Internacional
|
Si |
|
Nombre congreso
|
2016 IEEE International Electron Devices Meeting (IEDM) |
|
Tipo de participación
|
960 |
|
Lugar del congreso
|
San Francisco, CA, USA |
|
Revisores
|
Si |
|
ISBN o ISSN
|
978-1-5090-3902-9 |
|
DOI
|
10.1109/IEDM.2016.7838341 |
|
Fecha inicio congreso
|
03/12/2016 |
|
Fecha fin congreso
|
07/12/2016 |
|
Desde la página
|
371 |
|
Hasta la página
|
374 |
|
Título de las actas
|
Proceedings 2016 IEEE International Electron Devices Meeting (IEDM) |
Participantes
- Autor: Ujwal Radhakrishna (Microsystems Technology Laboratories, Massachusetts Institute of Technology, Cambridge)
- Autor: Pilsoon Choi (Microsystems Technology Laboratories, Massachusetts Institute of Technology, Cambridge)
- Autor: Jesus Grajal De la Fuente (UPM)
- Autor: Li-Shiuan Peh (Microsystems Technology Laboratories, Massachusetts Institute of Technology, Cambridge)
- Autor: Tomás Palacios (Microsystems Technology Laboratories, Massachusetts Institute of Technology, Cambridge)
- Autor: Dimitri Antoniadis (Microsystems Technology Laboratories, Massachusetts Institute of Technology, Cambridge)
Grupos de investigación, Departamentos, Centros e Institutos de I+D+i relacionados
- Creador: Grupo de Investigación: Microondas y Radar
- Centro o Instituto I+D+i: Centro de I+d+i en Procesado de la Información y Telecomunicaciones
- Departamento: Señales, Sistemas y Radiocomunicaciones
S2i 2023 Observatorio de investigación @ UPM con la colaboración del Consejo Social UPM
Cofinanciación del MINECO en el marco del Programa INNPACTO (IPT-020000-2010-22)