Descripción
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A detailed linearity performance analysis of GaN-HEMT technology is performed spanning technology-device-circuit level using physics-based MVSG-model as a simulation tool. The model includes the physics of charge and carrier transport in different regions of the device and includes thermal and charge-trapping effects that are verified against a suite of device-level measurements including large-signal linearity benchmarking. Technology sources of device-non-linearity are identified to aid process-design and circuit techniques for linearity improvement are demonstrated using a PA circuit designed using the MVSG model. | |
Internacional
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Si |
Nombre congreso
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2016 IEEE International Electron Devices Meeting (IEDM) |
Tipo de participación
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960 |
Lugar del congreso
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San Francisco, CA, USA |
Revisores
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Si |
ISBN o ISSN
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978-1-5090-3902-9 |
DOI
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10.1109/IEDM.2016.7838341 |
Fecha inicio congreso
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03/12/2016 |
Fecha fin congreso
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07/12/2016 |
Desde la página
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371 |
Hasta la página
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374 |
Título de las actas
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Proceedings 2016 IEEE International Electron Devices Meeting (IEDM) |