Memorias de investigación
Communications at congresses:
Frequency Characterization of AlN Piezoelectric Resonators
Year:2007

Research Areas
  • Electronics engineering

Information
Abstract
In this paper, we analyze the vibrational spectra of mechanical resonators actuated piezoelectrically with aluminum nitride (AlN) films. The microresonators consist in bimorph cantilevers with different lengths containing a piezoelectric metal/AlN/metal stack supported by a silicon nitride structural layer. The thicknesses of both the AlN and Si3N4 layers are varied between 0.3 mum and 1 mum to study their influence on the mechanical response of the cantilevers. The motion of the cantilevers electrically driven is first assessed by optical laser interferometry; resonant frequencies varying between 100 kHz and 8 MHz are obtained. Additionally, many of the vibrational modes are detected by measuring the changes of the electrical impedance at the resonant frequencies. The mass detection factor of the cantilevers is assessed by measuring the frequency shift after mass loading with thin SiO2 layers. A value of 0.18 fg/Hz is obtained for vibrational modes around MHz.
International
Si
Congress
2007 European Frequency and Time Forum & IEEE International Frequency Control Symposium Joint Conference TimeNave-07
960
Place
Ginebra, Suiza
Reviewers
Si
ISBN/ISSN
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Participants

Research Group, Departaments and Institutes related
  • Creador: Grupo de Investigación: Microsistemas y materiales electrónicos
  • Departamento: Tecnología Electrónica
  • Departamento: Ingeniería Electrónica
  • Departamento: Sistemas Electrónicos y de Control