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Descripción
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| We report the growth of highly c-axis-textured aluminum nitride (AlN) films deposited by sputtering on evaporated iridium (Ir) layers. The crystal quality of the polycrystalline AlN films is analyzed as a function of the deposition conditions of the Ir electrode, which include the substrate temperature and the use of various seed layers, such as AlN, Ti and Ti/Mo. The influence of the sputter parameters and pre-treatment of the Ir substrates by Ar+ bombardment in the texture of the AlN films is also investigated. X-ray diffraction (XRD), atomic force microscopy (AFM) and piezoelectric assessment through measurement of BAW devices demonstrate that exceptionally highly c-axis-oriented AlN with high piezoelectric response can be sputtered on Ir electrodes. | |
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Internacional
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Si |
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Nombre congreso
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2007 IEEE International Ultrasonics Symposium |
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Tipo de participación
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960 |
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Lugar del congreso
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Nueva York, Estados Unidos |
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Revisores
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Si |
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ISBN o ISSN
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DOI
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Fecha inicio congreso
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28/10/2007 |
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Fecha fin congreso
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31/10/2007 |
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