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Descripción
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| In this work we present a study of the irradiating time and wavelength influence in laser annealing of amorphous silicon thin films, using both continuous wave and pulsed laser sources emitting at wave- lengths ranging from UV to IR. Experimental characterization of the crystallized samples have been obtained by MicroRaman spectroscopy. A simple thermal finite element model (FEM) has been devel- oped in COMSOL Multiphysics to simulate the process by solving numerically the two dimensional non-linear heat transfer equation with a steady heat source. The local temperature evolution in the ir- radiated area given by the FEM model is compared to the crystalline fraction profiles. The numerical model developed helps to understand the physics underlying and determine the process parameters in which crystalline silicon is obtained without damage or ablation of the silicon surface. | |
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Internacional
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Si |
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Nombre congreso
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19th European Conference on Mathematics for Industry |
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Tipo de participación
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960 |
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Lugar del congreso
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Santiago de Compostela |
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Revisores
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Si |
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ISBN o ISSN
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CDP08UPM |
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DOI
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http://dx.doi.org/10.15304/cc.2016.968 |
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Fecha inicio congreso
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13/06/2016 |
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Fecha fin congreso
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17/06/2016 |
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Desde la página
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256 |
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Hasta la página
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256 |
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Título de las actas
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19th European Conference on Mathematics for Industry: book of Abstracts |