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Descripción
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| Resistive switching memories [resistive RAM (RRAM)] are an attractive alternative to nonvolatile storage and nonconventional computing systems, but their behavior strongly depends on the cell features, driver circuit, and working conditions. In particular, the circuit temperature and writing voltage schemes become critical issues, determining resistive switching memories performance. These dependencies usually force a design time tradeoff among reliability, device endurance, and power consumption, thereby imposing nonflexible functioning schemes and limiting the system performance. In this paper, we present a writing architecture that ensures the correct operation no matter the working temperature and allows the dynamic load of application-oriented writing profiles. Thus, taking advantage of more efficient configurations, the system can be dynamically adapted to overcome RRAM intrinsic challenges. Several profiles are analyzed regarding power consumption, temperature-variations protection, and operation speed, showing speedups near 700x compared with other published drivers. | |
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Internacional
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Si |
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JCR del ISI
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Si |
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Título de la revista
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Ieee Transactions on Very Large Scale Integration (Vlsi) Systems |
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ISSN
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1063-8210 |
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Factor de impacto JCR
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1,245 |
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Información de impacto
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Volumen
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25 |
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DOI
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10.1109/TVLSI.2016.2634083 |
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Número de revista
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4 |
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Desde la página
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1224 |
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Hasta la página
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1235 |
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Mes
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ABRIL |
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Ranking
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