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Memorias de investigación
Artículos en revistas:
Reconfigurable Writing Architecture for Reliable RRAM Operation in Wide Temperature Ranges.
Año:2016
Áreas de investigación
  • Tecnología electrónica y de las comunicaciones
Datos
Descripción
Resistive switching memories [resistive RAM (RRAM)] are an attractive alternative to nonvolatile storage and nonconventional computing systems, but their behavior strongly depends on the cell features, driver circuit, and working conditions. In particular, the circuit temperature and writing voltage schemes become critical issues, determining resistive switching memories performance. These dependencies usually force a design time tradeoff among reliability, device endurance, and power consumption, thereby imposing nonflexible functioning schemes and limiting the system performance. In this paper, we present a writing architecture that ensures the correct operation no matter the working temperature and allows the dynamic load of application-oriented writing profiles. Thus, taking advantage of more efficient configurations, the system can be dynamically adapted to overcome RRAM intrinsic challenges. Several profiles are analyzed regarding power consumption, temperature-variations protection, and operation speed, showing speedups near 700x compared with other published drivers.
Internacional
Si
JCR del ISI
Si
Título de la revista
Ieee Transactions on Very Large Scale Integration (Vlsi) Systems
ISSN
1063-8210
Factor de impacto JCR
1,245
Información de impacto
Volumen
25
DOI
10.1109/TVLSI.2016.2634083
Número de revista
4
Desde la página
1224
Hasta la página
1235
Mes
ABRIL
Ranking
Esta actividad pertenece a memorias de investigación
Participantes
  • Autor: Fernando Garcia Redondo (UPM)
  • Autor: Pablo Royer Del Barrio (UPM)
  • Autor: M. Luisa Lopez Vallejo (UPM)
  • Autor: Hernan Aparicio Cerqueira (UPM)
  • Autor: Pablo Ituero Herrero (UPM)
  • Autor: Carlos Alberto Lopez Barrio (UPM)
Grupos de investigación, Departamentos, Centros e Institutos de I+D+i relacionados
  • Creador: Grupo de Investigación: Laboratorio de Sistemas Integrados (LSI)
  • Departamento: Ingeniería Electrónica
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