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Memorias de investigación
Artículos en revistas:
Sb and N incorporation interplay in GaAsSbN/GaAs epilayers near lattice matching con-dition for 1.0.-1.16 eV photonic applications
Año:2017
Áreas de investigación
  • Tecnología electrónica y de las comunicaciones
Datos
Descripción
As promising candidates for solar cell and photodetection applications in the range 1.0?1.16 eV, the growth of dilute nitride GaAsSbN alloys lattice matched to GaAs is studied. With this aim, we have taken advantage of the temperature gradient in the molecular beam epitaxy reactor to analyse the impact of temperature on the incorporation of Sb and N species according to the wafer radial composition gradients. The results from the combination of X-ray diffraction (XRD) and energy-dispersive X-ray spectroscopies (EDS) show an opposite rate of incorporation between N and Sb as we move away from the centre of the wafer. A competitive behaviour between Sb and N in order to occupy the group-V position is observed that depends on the growth rate and the substrate temperature. The optical properties obtained by photoluminescence are discussed in the frame of the double-band anticrossing model. The growth conditions define two sets of different parameters for the energy level and the coupling interaction potential of N, which must be taken into account in the search for the optimum compositions 1?1.15-eV photonic applications.
Internacional
Si
JCR del ISI
Si
Título de la revista
Nanoscale Research Letters
ISSN
1556-276X
Factor de impacto JCR
2,584
Información de impacto
Datos JCR del año 2015
Volumen
12
DOI
10.1186/s11671-017-2129-2
Número de revista
Desde la página
356:1
Hasta la página
356:10
Mes
SIN MES
Ranking
Esta actividad pertenece a memorias de investigación
Participantes
  • Autor: Verónica Braza (UCA)
  • Autor: Daniel F. Reyes (UCA)
  • Autor: Alicia Gonzalo Martin (UPM)
  • Autor: Antonio David Utrilla Lomas (UPM)
  • Autor: Teresa Ben (UCA)
  • Autor: Jose Maria Ulloa Herrero (UPM)
  • Autor: David González (UCA)
Grupos de investigación, Departamentos, Centros e Institutos de I+D+i relacionados
  • Creador: Departamento: Ingeniería Electrónica
  • Departamento: Ciencia de Materiales
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