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Memorias de investigación
Artículos en revistas:
Thin GaAsSb capping layers for improved performance of InAs/GaAs quantum dot solar cells
Año:2016
Áreas de investigación
  • Tecnología electrónica y de las comunicaciones
Datos
Descripción
The use of thin GaAsSb capping layers (CLs) is demonstrated to provide InAs/GaAs quantum dot (QD) solar cells (SCs) with improved efficiencies up to 20%. The application of such CLs allows the tunability of the QD ground state, switching the QD-CL band alignment to type II for high Sb contents and extending the photoresponse up to 1.5 ?m. Moreover, the CL provides a significant contribution to the photocurrent. An improved carrier collection efficiency is also found to be a main reason behind the increase of the short-circuit current density, unveiling a negative impact of the wetting layer (WL) on carrier transport in standard InAs/GaAs QD SCs. Calculations from an 8×8 k·p method suggest the attribution of such an improvement to longer carrier lifetimes in the WL-CL structure due to the transition to a type-II band alignment in Sb-containing structures. A faster open-circuit voltage recovery under light concentration is demonstrated for high Sb content type-II QD-CL structures, leading, in turn, to faster efficiency improvements with light power.
Internacional
Si
JCR del ISI
No
Título de la revista
Proceedings of the 32nd European Pho-tovoltaic Solar Energy Conference and Exhibition
ISSN
2196-100X
Factor de impacto JCR
Información de impacto
Volumen
DOI
Número de revista
Desde la página
32
Hasta la página
35
Mes
SIN MES
Ranking
Esta actividad pertenece a memorias de investigación
Participantes
  • Autor: Antonio David Utrilla Lomas (UPM)
  • Autor: D.F. Reyes (UCA)
  • Autor: J.M. Llorens (IMM)
  • Autor: Alicia Gonzalo Martin (UPM)
  • Autor: Irene Artacho Huertas (UPM)
  • Autor: T. Ben (UCA)
  • Autor: D. González (UCA)
  • Autor: Zarko Gacevic (UPM)
  • Autor: Alvaro de Guzman Fernandez Gonzalez (UPM)
  • Autor: Adrian Hierro Cano (UPM)
  • Autor: Jose Maria Ulloa Herrero (UPM)
Grupos de investigación, Departamentos, Centros e Institutos de I+D+i relacionados
  • Creador: Departamento: Ciencia de Materiales
  • Departamento: Electrónica Física
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