|
Descripción
|
|
|---|---|
| The use of thin GaAsSb capping layers (CLs) is demonstrated to provide InAs/GaAs quantum dot (QD) solar cells (SCs) with improved efficiencies up to 20%. The application of such CLs allows the tunability of the QD ground state, switching the QD-CL band alignment to type II for high Sb contents and extending the photoresponse up to 1.5 ?m. Moreover, the CL provides a significant contribution to the photocurrent. An improved carrier collection efficiency is also found to be a main reason behind the increase of the short-circuit current density, unveiling a negative impact of the wetting layer (WL) on carrier transport in standard InAs/GaAs QD SCs. Calculations from an 8×8 k·p method suggest the attribution of such an improvement to longer carrier lifetimes in the WL-CL structure due to the transition to a type-II band alignment in Sb-containing structures. A faster open-circuit voltage recovery under light concentration is demonstrated for high Sb content type-II QD-CL structures, leading, in turn, to faster efficiency improvements with light power. | |
|
Internacional
|
Si |
|
JCR del ISI
|
No |
|
Título de la revista
|
Proceedings of the 32nd European Pho-tovoltaic Solar Energy Conference and Exhibition |
|
ISSN
|
2196-100X |
|
Factor de impacto JCR
|
|
|
Información de impacto
|
|
|
Volumen
|
|
|
DOI
|
|
|
Número de revista
|
|
|
Desde la página
|
32 |
|
Hasta la página
|
35 |
|
Mes
|
SIN MES |
|
Ranking
|
|