Memorias de investigación
Communications at congresses:
Thin GaAsSb capping layers for improved performance of InAs/GaAs quantum dot solar cells
Year:2016

Research Areas
  • Solar cells

Information
Abstract
The use of thin GaAsSb capping layers (CLs) is demonstrated to provide InAs/GaAs quantum dot (QD) solar cells (SCs) with improved efficiencies up to 20%. The application of such CLs allows the tunability of the QD ground state, switching the QD-CL band alignment to type II for high Sb contents and extending the photoresponse up to 1.5 ?m. Moreover, the CL provides a significant contribution to the photocurrent. An improved carrier collection efficiency is also found to be a main reason behind the increase of the short-circuit current density, unveiling a negative impact of the wetting layer (WL) on carrier transport in standard InAs/GaAs QD SCs. Calculations from an 8×8 k·p method suggest the attribution of such an improvement to longer carrier lifetimes in the WL-CL structure due to the transition to a type-II band alignment in Sb-containing structures. A faster open-circuit voltage recovery under light concentration is demonstrated for high Sb content type-II QD-CL structures, leading, in turn, to faster efficiency improvements with light power.
International
Si
Congress
32nd European Photovoltaic Solar Energy Conference
960
Place
Munich (Germany)
Reviewers
Si
ISBN/ISSN
3-936338-41-8
10.4229/EUPVSEC20162016-1AO.3.3
Start Date
21/06/2016
End Date
24/06/2016
From page
32
To page
35
Proc. 32nd EUPVSEC 2016
Participants

Research Group, Departaments and Institutes related
  • Creador: Centro o Instituto I+D+i: Instituto de Energía Solar
  • Departamento: Electrónica Física
  • Departamento: Ciencia de Materiales