Memorias de investigación
Research Publications in journals:
Effects of HfO2 Gate dielectric and KOH-based pre-treatments on AlGaN/GaN Metal-Oxide-Semiconductor High Electron Mobility Transistors
Year:2017
Research Areas
  • Microelectronics,
  • Microelectronic design,
  • Transistors of field efect of mos (mosfet) type,
  • Semiconductors ii-vi, iii-v and iv-iv,
  • Mosfet type devices
Information
Abstract
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JCR
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Title
11th Spanish Conference on Electron Devices (CDE-2017)
ISBN
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Participants
Research Group, Departaments and Institutes related
  • Creador: Departamento: Ingeniería Electrónica