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Descripción
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| The inverted metamorphic solar cell has highly tunable bandgaps, in part due to the metamorphic subcells. Using phosphide-based compositionally graded buffers, we show a wide variety of GaInAs solar cells, ranging in bandgap from 1.2 to 0.7 eV. These metamorphic subcells are all high quality and can be used for a wide variety of multijunction designs. GaInAs solar cells with 0.70 eV bandgaps are developed using an InAsP buffer that extends beyond the InP lattice constant, allowing access to an additional 2 mA/cm2 of photocurrent at AM1.5D and 25 °C. This subcell is implemented into a four-junction inverted metamorphic solar cell combined with an appropriate antireflective coating, which increases the series-connected multijunction current by 0.5 mA/cm2 with respect to designs using 0.74-eV GaInAs. However, the optimal design depends on the spectrum and operating temperature. We show how the device flexibility can be used to fine-tune the design for various spectra in order to maximize energy yield for a given operating condition. One-sun devices achieve 35.3 ± 1.2% efficiency under the AM0 spectra and 37.8 ± 1.2% efficiency under the global spectra at 25 °C. Concentrator devices designed for elevated operating temperature achieve 45.6 ± 2.3% peak efficiency under 690� the direct spectrum and 45.2 ± 2.3% efficiency at 1000� and 25 °C. Device optimization is performed for the direct spectrum on 1-sun devices with 2% shadowing, which achieve 39.8 ± 1.2% efficiency under the direct spectrum at 1 sun, highlighting the excellent performance and bandgap tunability of the four-junction inverted metamorphic solar cell. © 2015 IEEE. | |
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Internacional
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Si |
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JCR del ISI
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Si |
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Título de la revista
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Ieee Journal of Photovoltaics |
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ISSN
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2156-3381 |
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Factor de impacto JCR
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3,736 |
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Información de impacto
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Volumen
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6 |
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DOI
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10.1109/jphotov.2015.2505182 |
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Número de revista
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2 |
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Desde la página
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578 |
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583 |
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