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Descripción
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| Silicon samples were implanted with high Ti doses and subsequently processed with the pulsed-laser melting technique. The electronic transport properties in the 15-300 K range and the room temperature spectral photoresponse at energies over the bandgap were measured. Samples with Ti concentration below the insulator-metal (I-M) transition limit showed a progressive reduction of the carrier lifetime in the implanted layer as Ti dose is increased. However, when the Ti concentration exceeded this limit, an extraordinary recovery of the photoresponse was measured. This result supports the theory of intermediate band materials and is of utmost relevance for photovoltaic cells and Si-based detectors. | |
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Internacional
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Si |
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JCR del ISI
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Si |
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Título de la revista
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Journal of Physics D-Applied Physics |
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ISSN
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0022-3727 |
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Factor de impacto JCR
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2,772 |
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Información de impacto
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Volumen
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49 |
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DOI
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10.1088/0022-3727/49/5/055103 |
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Número de revista
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5 |
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Desde la página
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055103-1 |
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Hasta la página
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055103-7 |
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Mes
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SIN MES |
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Ranking
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