Memorias de investigación
Research Publications in journals:
Differences between GaAs/GaInP and GaAs/AlInP interfaces grown by movpe revealed by depth profiling and angle-resolved X-ray photoelectron spectroscopies
Year:2016
Research Areas
  • Semiconductors ii-vi, iii-v and iv-iv
Information
Abstract
GaAs/GaInP and GaAs/AlInP interfaces have been studied using photoelectron spectroscopy tools. The combination of depth profile through Ar+ sputtering and angle resolved X-ray photoelectron spectroscopy provides reliable information on the evolution of the interface chemistry. Measurement artifacts related to each particular technique can be ruled out on the basis of the results obtained with the other technique. GaAs/GaInP interface spreads out over a shorter length than GaAs/AlInP interface. The former could include the presence of the quaternary GaInAsP in addition to the nominal GaAs and GaInP layers. On the contrary, the GaAs/AlInP interface exhibits a higher degree of compound mixture. Namely, traces of P atoms in a chemical environment different to the usual AlInP coordination were found at the top of the GaAs/AlInP interface, as well as mixed phases like AlInP, GaInAsP or AlGaInAsP, located at the interface. © 2015 Elsevier B.V.
International
Si
JCR
Si
Title
Applied Surface Science
ISBN
0169-4332
Impact factor JCR
3,15
Impact info
Volume
360
10.1016/j.apsusc.2015.10.098
Journal number
B
From page
477
To page
484
Month
SIN MES
Ranking
Participants
Research Group, Departaments and Institutes related
  • Creador: Centro o Instituto I+D+i: Instituto de Energía Solar