Memorias de investigación
Artículos en revistas:
Differences between GaAs/GaInP and GaAs/AlInP interfaces grown by movpe revealed by depth profiling and angle-resolved X-ray photoelectron spectroscopies
Año:2016
Áreas de investigación
  • Semiconductores ii-vi, iii-v y iv-iv
Datos
Descripción
GaAs/GaInP and GaAs/AlInP interfaces have been studied using photoelectron spectroscopy tools. The combination of depth profile through Ar+ sputtering and angle resolved X-ray photoelectron spectroscopy provides reliable information on the evolution of the interface chemistry. Measurement artifacts related to each particular technique can be ruled out on the basis of the results obtained with the other technique. GaAs/GaInP interface spreads out over a shorter length than GaAs/AlInP interface. The former could include the presence of the quaternary GaInAsP in addition to the nominal GaAs and GaInP layers. On the contrary, the GaAs/AlInP interface exhibits a higher degree of compound mixture. Namely, traces of P atoms in a chemical environment different to the usual AlInP coordination were found at the top of the GaAs/AlInP interface, as well as mixed phases like AlInP, GaInAsP or AlGaInAsP, located at the interface. © 2015 Elsevier B.V.
Internacional
Si
JCR del ISI
Si
Título de la revista
Applied Surface Science
ISSN
0169-4332
Factor de impacto JCR
3,15
Información de impacto
Volumen
360
DOI
10.1016/j.apsusc.2015.10.098
Número de revista
B
Desde la página
477
Hasta la página
484
Mes
SIN MES
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Participantes
Grupos de investigación, Departamentos, Centros e Institutos de I+D+i relacionados
  • Creador: Centro o Instituto I+D+i: Instituto de Energía Solar