Descripción
|
|
---|---|
Type?II GaAsSb/GaAsN superlattice (SL) structures are presented as a novel approach to remarkably improve the versatility of GaAsSbN and its suitability for 1 eV layers in tandem cells. The spatial separation of both Sb and N demonstrates an improved compositional control allowing an accurate control of the lattice?matching condition. Type?II SLs show a more efficient luminescence than the equivalent bulk and type?I GaAsSbN/GaAs SL counterparts, despite the longer radiative lifetimes, showing promising properties for an efficient carrier collection. The modification of the period thickness also allows a precise control over the absorption edge while additionally tuning the radiative carrier lifetimes. | |
Internacional
|
Si |
Nombre congreso
|
19th International Conference on Molecular Beam Epitaxy (NAMBE2016) |
Tipo de participación
|
960 |
Lugar del congreso
|
Montpellier, France |
Revisores
|
Si |
ISBN o ISSN
|
0000-0000 |
DOI
|
|
Fecha inicio congreso
|
04/09/2016 |
Fecha fin congreso
|
09/09/2016 |
Desde la página
|
62 |
Hasta la página
|
62 |
Título de las actas
|
- |