Memorias de investigación
Artículos en revistas:
Influence of the thermal contact resistance in current-induced domain wall depinning
Año:2017

Áreas de investigación
  • Física química y matemáticas,
  • Tecnologías a escala nano

Datos
Descripción
In this work we study the influence of the thermal contact resistance on the temperature of a typical nanostripe used in current induced magnetic domain wall movement or depinning. The thermal contact resistance arises from an imperfect heat transport across the interface between the metallic ferromagnetic nanostripe and the substrate. We show that this parameter, which is likely non-zero in any experimental device, increases the temperature in the nanostripe considerably. When the current is injected in the nanostripe in nanosecond long pulses, the larger temperature also implies a reduction of the effective current density delivered by the pulse generator. Both the thermal contact resistance and the dynamic response of the pulse generator are usually neglected in theoretical estimations of the influence of spin transfer torque on domain wall displacement and depinning. Here we show that only if the thermal contact resistance and the electric resistivity of the ferromagnetic nanostripe are optimized to the best values reported in the bibliography, the Joule heating may not be so crucial for current densities of the order of 10 E+8 A/cm^2 . Also, the use of physical constrictions (notch) to pin the magnetic domain wall may complicate the interpretation of the results as they always come together with relevant thermal gradients.
Internacional
Si
JCR del ISI
Si
Título de la revista
Journal of Physics D-Applied Physics
ISSN
0022-3727
Factor de impacto JCR
2,772
Información de impacto
Datos JCR del año 2015
Volumen
50
DOI
10.1088/1361-6463/aa7a9c
Número de revista
32
Desde la página
32501
Hasta la página
32501 (8pp
Mes
SIN MES
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Participantes

Grupos de investigación, Departamentos, Centros e Institutos de I+D+i relacionados
  • Creador: Grupo de Investigación: Grupo de dispositivos magnéticos del ISOM
  • Centro o Instituto I+D+i: Instituto Universitario de Sistemas Optoelectrónicos y Microtecnología
  • Departamento: Electrónica Física, Ingeniería Eléctrica y Física Aplicada