Descripción
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This work presents approaches to assess the PotentiaL Induced Degradation (PID) on c-Si photovoltaic modules and installations. The IEC TS 62804-1:2015 was applied to the laboratory tests and some additional actions are suggested. The adaptation of the technical specification aims to monitor the degradation rates during the tests and also to consider the capacity of the photovoltaic modules to recover from athe degradation. In the field detection methodologies are presented and anti-PID circuits were also tested. The theoretical approach reveals that individual voltage measurements are useful to detect PID even in its early stage, as can be seen on the case studies presented. | |
Internacional
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Si |
ISBN
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Tipo de Tesis
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Doctoral |
Calificación
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Sobresaliente |
Fecha
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14/11/2017 |