Memorias de investigación
Communications at congresses:
Studies of free charge carrier properties in AlGaN and InGaN based structures by infrared and terahertz optical Hall effect
Year:2017
Research Areas
  • Engineering,
  • Electronic technology and of the communications
Information
Abstract
Relacionado con líneas de investigación del GDS ISOM
International
Si
Congress
ICNS 12 - 12th International Conference on Nitride Semiconductors
960
Place
Estrasburgo (France)
Reviewers
Si
ISBN/ISSN
0000000000000
Start Date
24/07/2017
End Date
28/07/2017
From page
0
To page
3
Proceedings
Participants
  • Autor: N. Armakavicius
  • Autor: JT. Chen
  • Autor: T. Hofmann
  • Autor: S. Knight
  • Autor: P. Kuhne
  • Autor: Mengyao Xie . UPM
  • Autor: Enrique Calleja Pardo UPM
  • Autor: M Shu
  • Autor: et al
Research Group, Departaments and Institutes related
  • Creador: Grupo de Investigación: Grupo de Dispositivos Semiconductores del ISOM
  • Departamento: Ingeniería Electrónica
  • Centro o Instituto I+D+i: Instituto Universitario de Sistemas Optoelectrónicos y Microtecnología