Memorias de investigación
Communications at congresses:
Effects of HfO2 Gate dielectric and KOH-based pre-treatments on AlGaN/GaN Metal-Oxide-Semiconductor High Electron Mobility Transistors
Year:2017

Research Areas
  • Engineering,
  • Electronic technology and of the communications

Information
Abstract
Relacionado con líneas de investigación del GDS ISOM
International
Si
Congress
The 11TH Spanish conference on electron Devices 2017
960
Place
Barcelona (Spain), 2017
Reviewers
Si
ISBN/ISSN
0000000000000
Start Date
08/02/2018
End Date
10/02/2018
From page
0
To page
3
Proceedings
Participants

Research Group, Departaments and Institutes related
  • Creador: Grupo de Investigación: Grupo de Dispositivos Semiconductores del ISOM
  • Centro o Instituto I+D+i: Instituto Universitario de Sistemas Optoelectrónicos y Microtecnología
  • Departamento: Ingeniería Electrónica