Observatorio de I+D+i UPM

Descripción
Tunnel junctions are essential components of multijunction solar cells. These highly doped p/n junctions provide the electrical interconnect between the subcells that constitute a multijunction solar cell device. The conductivity and the peak tunneling current of tunnel diodes are known to be severely affected by thermal load. This is a general phenomenon observed in tunnel junctions despite the materials used, the dopants employed or the growth technique applied. Despite this generality, the explanations for this thermal degradation tend to be quite material/dopant specific. On the contrary, in this work we apply the amphoteric native defect model to explain this issue. In this context, the degradation can be explained as a consequence of the net loss of free carrier concentration produced by the creation of native compensating defects in the highly doped layers of the tunnel junction. Experiments carried out on n++ GaAs agree well with the model.
Internacional	Si
Nombre congreso	13th International Conference on Concentrator Photovoltaic Systems, CPV13
Tipo de participación	960
Lugar del congreso	Ottawa
Revisores	Si
ISBN o ISSN	0094-243X
DOI	10.1063/1.5001427
Fecha inicio congreso	01/05/2017
Fecha fin congreso	03/05/2017
Desde la página	400051
Hasta la página	400057
Título de las actas	Proceedings

Esta actividad pertenece a memorias de investigación

• Autor: Ignacio Rey-Stolle Prado (UPM)
• Autor: Ivan Garcia Vara (UPM)
• Autor: Enrique Barrigón
• Autor: Javier Olea
• Autor: David Pastor
• Autor: Mario Ochoa Gómez (UPM)
• Autor: Laura Barrutia Poncela (UPM)
• Autor: Carlos Algora Del Valle (UPM)
• Autor: W. Walukiewicz

• Creador: Grupo de Investigación: Semiconductores III-V
• Centro o Instituto I+D+i: Instituto de Energía Solar
• Departamento: Electrónica Física, Ingeniería Eléctrica y Física Aplicada