Memorias de investigación
Communications at congresses:
On the thermal degradation of tunnel diodes in multijunction solar cells C3
Year:2017
Research Areas
  • Engineering
Information
Abstract
Tunnel junctions are essential components of multijunction solar cells. These highly doped p/n junctions provide the electrical interconnect between the subcells that constitute a multijunction solar cell device. The conductivity and the peak tunneling current of tunnel diodes are known to be severely affected by thermal load. This is a general phenomenon observed in tunnel junctions despite the materials used, the dopants employed or the growth technique applied. Despite this generality, the explanations for this thermal degradation tend to be quite material/dopant specific. On the contrary, in this work we apply the amphoteric native defect model to explain this issue. In this context, the degradation can be explained as a consequence of the net loss of free carrier concentration produced by the creation of native compensating defects in the highly doped layers of the tunnel junction. Experiments carried out on n++ GaAs agree well with the model.
International
Si
Congress
13th International Conference on Concentrator Photovoltaic Systems, CPV13
960
Place
Ottawa
Reviewers
Si
ISBN/ISSN
0094-243X
10.1063/1.5001427
Start Date
01/05/2017
End Date
03/05/2017
From page
400051
To page
400057
Proceedings
Participants
Research Group, Departaments and Institutes related
  • Creador: Grupo de Investigación: Semiconductores III-V
  • Centro o Instituto I+D+i: Instituto de Energía Solar
  • Departamento: Electrónica Física, Ingeniería Eléctrica y Física Aplicada