Memorias de investigación
Ponencias en congresos:
Al-based front contacts for HCPV solar cell C3
Año:2017
Áreas de investigación
  • Ingenierías
Datos
Descripción
One of the key design challenges for high efficiency concentrator solar cells is to minimize the impact of ohmic losses associated with the large current densities that these devices handle. Typically, the most critical component of the series resistance is that of the front contact. On the one hand, in order to minimize its metal-semiconductor specific contact resistance, AuGeNi alloys are frequently used at the interface. On the other hand, to minimize the metal sheet resistance in the grid, thick silver layers are used, sometimes even coated with a gold capping layer. Such configuration results in a contact with good performance, but with elevated cost, and sometimes prone to suffering from degradation problems (electromigration, spiking, ?) and deteriorated metal sheet conductance due to the interdiffusion between GaAs and the metals in the contact. In this work, we have explored a low cost high performance alternative based on Pd/Ge/Ti/Pd/Al metal stacks. The thicker top Al layer offers low metal resistivity, low cost, and good bondability; the middle Ti/Pd bilayer works as an efficient two-way diffusion barrier; and the interfacial Pd/Ge layer provides very low specific contact resistance to the GaAs contact layer. The results show that a Pd/Ge/Ti/Pd/Al front contact reduces the series resistance and thus can improve the performance of solar cells at ultrahigh concentration levels.
Internacional
Si
Nombre congreso
13th International Conference on Concentrator Photovoltaic Systems, CPV13
Tipo de participación
960
Lugar del congreso
Ottawa
Revisores
Si
ISBN o ISSN
0094-243X
DOI
10.1063/1.5001426
Fecha inicio congreso
01/05/2017
Fecha fin congreso
03/05/2017
Desde la página
400041
Hasta la página
400046
Título de las actas
Proceedings
Esta actividad pertenece a memorias de investigación
Participantes
Grupos de investigación, Departamentos, Centros e Institutos de I+D+i relacionados
  • Creador: Grupo de Investigación: Semiconductores III-V
  • Departamento: Electrónica Física, Ingeniería Eléctrica y Física Aplicada
  • Centro o Instituto I+D+i: Instituto de Energía Solar