Memorias de investigación
Communications at congresses:
Self-Aligned InGaAs FinFETs with 5-nm Fin-Width and 5-nm Gate-Contact Separation
Year:2017

Research Areas
  • Electronic technology and of the communications

Information
Abstract
We demonstrate self-aligned InGaAs FinFETs with fin widths down to 5 nm fabricated through a CMOS compatible front-end process. Precision dry etching of the recess cap results in metal contacts that are about 5 nm away from the intrinsic portion of the fin. The new process has allowed us to fabricate devices with undoped fins and compare them with delta-doped fins. We find that in highly scaled transistors, undoped fin devices show better OFF-state and a tighter VT distribution but similar ON-state characteristics, as compared with ?-doped-fin transistors. 2D Poisson- Schrodinger simulations reveal undoped fins making more effective use of the fin height.
International
Si
Congress
2017 IEEE International Electron Devices Meeting (IEDM)
960
Place
San Francisco, CA, USA
Reviewers
Si
ISBN/ISSN
978-1-5386-3559-9
10.1109/IEDM.2017.8268411
Start Date
02/12/2017
End Date
06/12/2017
From page
429
To page
432
2017 IEEE International Electron Devices Meeting (IEDM)
Participants
  • Autor: Alon Vardi Massachusetts Institute of Technology, Cambridge
  • Autor: Lisa Kong Massachusetts Institute of Technology, Cambridge
  • Autor: Wenjie Lu Massachusetts Institute of Technology, Cambridge
  • Autor: Xiaowei Cai Massachusetts Institute of Technology, Cambridge
  • Autor: Xin Zhao Massachusetts Institute of Technology, Cambridge
  • Autor: Jesus Grajal De la Fuente UPM
  • Autor: Jesús A. Del Álamo Massachusetts Institute of Technology, Cambridge

Research Group, Departaments and Institutes related
  • Creador: Grupo de Investigación: Microondas y Radar
  • Centro o Instituto I+D+i: Centro de I+d+i en Procesado de la Información y Telecomunicaciones
  • Departamento: Señales, Sistemas y Radiocomunicaciones